The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Jul. 02, 2015
Applicant:

Trustees of Boston University, Boston, MA (US);

Inventors:

Gordon C. Brummer, Brookline, MA (US);

Denis M. Nothern, Watertown, MA (US);

Theodore D. Moustakas, Dover, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/14 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 33/46 (2010.01); H01L 33/58 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/145 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/58 (2013.01);
Abstract

The invention provides ultraviolet (UV) light-emitting diodes (LEDs). The UV LEDs can comprise abase layer including p-type SiC or p-type AlGaN, an active layer, and an n-AlGaN layer, wherein the active layer is disposed between the base layer and the n-AlGaN layer. In some embodiments, the absorption losses in p-SiC can be decreased or prevented by incorporating a conductive AlGaN Distributed Bragg Reflector (DBR) between the p-type SiC layer and the active layer. In some embodiments, the n-AlGaN layer can be textured to increase the extraction efficiency (EE). In some embodiments, the external quantum efficiency of the LEDs can be 20-30% or more.


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