Bengaluru, India

Deepti Saini

This inventor holds 1 USPTO granted patent. Top assignee: Nxp B.v.. Active years: 2020.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Deepti Saini: Innovator in Semiconductor Technology

Introduction

Deepti Saini is a prominent inventor based in Bengaluru, India. She has made significant contributions to the field of semiconductor technology, particularly in the design of memory circuits. Her innovative work has led to the development of a patent that enhances the performance of SRAM cells.

Latest Patents

Deepti holds a patent for a "Transistor body bias control circuit for SRAM cells." This semiconductor memory circuit includes a SRAM cell and a bias control circuit designed to bias the SRAM cell effectively. The SRAM cell comprises pull-up, pull-down, and pass-gate transistors. The bias control circuit connects to the body terminals of the pull-down and pass-gate transistors to provide a bias voltage. This bias voltage, which is temperature-dependent, is generated based on junction leakages at the body terminals. The innovative use of a temperature-dependent bias voltage ensures that the write margin and the static noise margin (SNM) of the SRAM cell remain relatively constant and above acceptable levels over a defined temperature range. Deepti has 1 patent to her name.

Career Highlights

Deepti Saini is currently employed at NXP B.V., where she continues to push the boundaries of semiconductor technology. Her work focuses on improving the efficiency and reliability of memory circuits, which are crucial for modern electronic devices.

Collaborations

Deepti collaborates with talented professionals in her field, including Jainendra Singh and Sushikha Jain. These collaborations foster an environment of innovation and creativity, leading to advancements in semiconductor technology.

Conclusion

Deepti Saini is a remarkable inventor whose contributions to semiconductor technology are noteworthy. Her patent for a transistor body bias control circuit demonstrates her commitment to enhancing the performance of SRAM cells. Her work at NXP B.V. and collaborations with other professionals further solidify her position as a leading innovator in her field.

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