Austin, TX, United States of America

Dawei Heh

This inventor holds 1 USPTO granted patent. Top assignees: Rutgers, The State University of New Jersey, Sematech, Inc.. Active years: 2009.


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Dawei Heh: Innovator in Capacitance Measurement Technologies

Introduction

Dawei Heh is a notable inventor based in Austin, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in methods for measuring capacitance. His innovative approach has implications for various applications in electronics and materials science.

Latest Patents

Dawei Heh holds a patent for "Methods for measuring capacitance." This patent describes methods for determining capacitance values of a metal on semiconductor (MOS) structures. The invention involves using a time domain reflectometry circuit loaded with a MOS structure, which can be biased with various voltages. Reflectometry waveforms from the applied voltage are collected, allowing for the determination of the capacitance of the MOS structure from these waveforms. He has 1 patent to his name.

Career Highlights

Throughout his career, Dawei Heh has worked with prominent organizations, including Sematech, Inc. and Rutgers, the State University of New Jersey. His experience in these institutions has allowed him to develop and refine his expertise in semiconductor technologies.

Collaborations

Dawei has collaborated with notable professionals in his field, including Kin Ping Cheung and Byoung Hun Lee. These collaborations have contributed to the advancement of research and development in capacitance measurement techniques.

Conclusion

Dawei Heh's contributions to the field of capacitance measurement highlight his innovative spirit and dedication to advancing semiconductor technology. His work continues to influence the industry and inspire future innovations.

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