The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Oct. 25, 2006
Applicants:
Kin P. Cheung, Hoboken, NJ (US);
Dawei Heh, Austin, TX (US);
Byoung Hun Lee, Austin, TX (US);
Rino Choi, Austin, TX (US);
Inventors:
Kin P. Cheung, Hoboken, NJ (US);
Dawei Heh, Austin, TX (US);
Byoung Hun Lee, Austin, TX (US);
Rino Choi, Austin, TX (US);
Assignees:
Sematech, Inc., Austin, TX (US);
Rutgers University, New Brunswick, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/11 (2006.01); G01R 27/04 (2006.01); G01R 27/32 (2006.01); G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods for determining capacitance values of a metal on semiconductor (MOS) structure are provided. A time domain reflectometry circuit may be loaded with a MOS structure. The MOS structure may be biased with various voltages, and reflectometry waveforms from the applied voltage may be collected. The capacitance of the MOS structure may be determined from the reflectometry waveforms.