The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Oct. 25, 2006
Kin P. Cheung, Hoboken, NJ (US);
Dawei Heh, Austin, TX (US);
Byoung Hun Lee, Austin, TX (US);
Rino Choi, Austin, TX (US);
Kin P. Cheung, Hoboken, NJ (US);
Dawei Heh, Austin, TX (US);
Byoung Hun Lee, Austin, TX (US);
Rino Choi, Austin, TX (US);
Sematech, Inc., Austin, TX (US);
Rutgers University, New Brunswick, NJ (US);
Abstract
Methods for determining capacitance values of a metal on semiconductor (MOS) structure are provided. A time domain reflectometry circuit may be loaded with a MOS structure. The MOS structure may be biased with various voltages, and reflectometry waveforms from the applied voltage may be collected. The capacitance of the MOS structure may be determined from the reflectometry waveforms.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile