Monroe, GA, United States of America

David W Worthey

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: 3M Innovative Properties Company. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David W Worthey. Retrieved from https://idiyas.com/inventor/david-w-worthey

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: David W. Worthey: Inventor of a High-Hardness Silicon-Nitride Separating Layer.

Introduction

David W. Worthey is an inventor associated with Monroe, Georgia, United States. His patent work includes an invention concerning a silicon-nitride-containing separating layer designed to combine strong adhesion with high hardness.

Latest Patents

Worthey is credited with 1 patent: “Silicon-nitride-containing separating layer having high hardness.” The patent describes a shaped body with a substrate and a firmly adhering separating layer. The layer contains 92–98 wt.% silicon nitride and 2–8 wt.% silicon dioxide, has a total oxygen content of at least 8 wt.%, and reaches a hardness of at least 10 HB 2.5/3 under DIN EN ISO 6506-1.

Career Highlights

Worthey’s listed patent is associated with 3M Innovative Properties Company. It focuses on material composition and mechanical properties that may be relevant to separating layers used in shaped bodies.

Collaborations

Krishna B. Uibel is identified as Worthey’s coworker. The available information does not specify further details about their collaboration.

Conclusion

David W. Worthey’s patent work highlights a silicon-nitride-based separating layer engineered for firm adhesion, controlled composition, and high hardness.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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