David T Lee

Title: Innovations of David T Lee

Introduction

David T Lee is an accomplished inventor based in Dublin, OH (US). He has made significant contributions to the field of capacitance measurement, holding 2 patents that showcase his innovative approaches. His work is particularly relevant in the realm of scanning capacitance microscopy, where precision and accuracy are paramount.

Latest Patents

David T Lee's latest patents include a method for measuring nm-scale tip-sample capacitance. This method involves measuring cantilever deflection and changes in probe-sample capacitance relative to a reference level as a function of probe assembly height. The process includes fitting out-of-contact data to a function, subtracting this function from capacitance data to obtain a residual capacitance, and determining the residual capacitance at a z-position where the cantilever deflection is zero. Another notable patent is for a direct, low-frequency capacitance measurement system for scanning capacitance microscopy. This invention provides a method for analyzing measured capacitance data by subtracting changes in capacitance due to long-range stray capacitance that occur during probe assembly scanning.

Career Highlights

David T Lee is affiliated with The Ohio State University, where he continues to advance his research and innovations. His work has garnered attention for its practical applications in semiconductor technology and materials science.

Collaborations

David has collaborated with notable colleagues such as Jonathan P Pelz and Bharat Bhushan, contributing to a rich environment of innovation and research.

Conclusion

David T Lee's contributions to the field of capacitance measurement and scanning capacitance microscopy highlight his role as a leading inventor. His patents reflect a commitment to advancing technology and improving measurement techniques in scientific research.