The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6856145 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 15, 2005

Filed:

Dec. 06, 2002
Applicants:

Jonathan P. Pelz, Columbus, OH (US);

David T. Lee, Dublin, OH (US);

Bharat Bhushan, Powell, OH (US);

Inventors:

Jonathan P. Pelz, Columbus, OH (US);

David T. Lee, Dublin, OH (US);

Bharat Bhushan, Powell, OH (US);

Assignee:

The Ohio State University, Columbus, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R027/26 ;
U.S. Cl.
CPC ...
Abstract

A system and method for measuring capacitance between a probe and a semiconductor sample, which may be useful in the field of scanning capacitance microscopy (SCM). The present invention also includes a method for analyzing measured capacitance data by subtracting any changes in capacitance that are due to changes in long-range stray capacitance that occur when the probe assembly is scanned.


Find Patent Forward Citations

Pelz, Jonathan. (2005). Direct, low frequency capacitance measurement for scanning capacitance microscopy (U.S. Patent No. 6856145). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6856145

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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