David R. Rhiger, an accomplished inventor based in Santa Barbara, CA, is known for his significant advancements in semiconductor technology. With a remarkable portfolio of 16 patents, Rhiger has made impactful contributions that enhance the efficiency and effectiveness of electrical devices utilizing mercury cadmium telluride (MCT).

Latest Patents

Among his latest patents, the invention titled "Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device" stands out. This patent describes an innovative electrical device featuring an aluminum nitride (AlN) passivation layer specifically designed for MCT semiconductor layers. The AlN passivation layer can be either an un-textured amorphous-to-polycrystalline film applied directly to the MCT or layered post-treatment. This unique approach to passivation reduces strain at the MCT interface by matching the coefficient of thermal expansion (CTE). Moreover, the AlN layer provides enhanced mechanical rigidity and chemical resistance, protecting the MCT.

Another recent patent by Rhiger centers on "Electrical contact fabrication." This method outlines the establishment of an electrical path between p-type mercury cadmium telluride and a metal layer. The fabrication process includes depositing a layer of polycrystalline p-type silicon directly onto the p-type mercury cadmium telluride, followed by the application of a metal layer. This invention ensures a robust electrical connection, allowing holes, indicative of electrical current, to flow efficiently between the p-type mercury cadmium telluride and the conductive metal.

Career Highlights

David R. Rhiger's career is marked by significant roles at prominent organizations, including Raytheon Company and Santa Barbara Research Center. His experience in these leading companies has allowed him to develop his innovative ideas into practical applications, shaping the future of semiconductor technology.

Collaborations

Throughout his career, Rhiger has collaborated with esteemed colleagues, including Charles A. Cockrum and William J. Hamilton, Jr. These collaborations have facilitated the exchange of ideas and expertise, contributing to the overall advancement in the field.

Conclusion

David R. Rhiger's inventions, particularly in the realm of aluminum nitride passivation layers and electrical contact fabrication, demonstrate his commitment to advancing semiconductor technology. With a total of 16 patents to his name, Rhiger remains a prominent figure in the innovation landscape, showcasing how continued research and development can lead to breakthroughs in electrical device performance. His work not only enhances the functionalities of MCT semiconductors but also emphasizes the importance of collaboration and knowledge sharing in the pursuit of technological progress.

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