Charlottesville, VA, United States of America

David R Decker


Average Co-Inventor Count = 1.5

ph-index = 3

Forward Citations = 94(Granted Patents)


Location History:

  • Los Altos, CA (US) (1976)
  • Charlottesville, VA (US) (1979)
  • Charlottsville, VA (US) (1979)

Company Filing History:


Years Active: 1976-1979

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3 patents (USPTO):Explore Patents

Title: The Innovations of David R Decker

Introduction

David R Decker is a notable inventor based in Charlottesville, VA, who has made significant contributions to the field of electronics. He holds three patents that showcase his innovative approach to improving field-effect transistors. His work has implications for enhancing the performance and efficiency of electronic devices.

Latest Patents

One of Decker's latest patents is for a Heterojunction confinement field effect transistor. This invention provides an improved field-effect transistor by forming the conducting channel boundary opposite the gate electrode as a heterojunction. For instance, a GaAs conducting channel may be bounded by an AlGaAs layer, which allows conduction electrons to penetrate the boundary minimally, thus constraining them to the channel layer with excellent transport properties. This design results in reduced output conductance and increased transconductance.

Another significant patent is for a field effect transistor having source and gate electrodes on opposite faces of the active layer. This configuration allows the source and gate electrodes to be positioned closer together, which can greatly reduce the series source resistance and channel resistance. By also placing the drain electrode on the same side of the active layer as the source, the source-to-drain spacing can be significantly minimized, enhancing the high-frequency performance of the transistor. Additionally, this design enables a large area contact on the substrate side of the epitaxial wafer structure, facilitating a low thermal and electrical resistance connection for the source contact.

Career Highlights

David R Decker has been associated with Varian Associates, Inc., where he has applied his expertise in electronics to develop innovative solutions. His work has contributed to advancements in the field, particularly in the design and functionality of transistors.

Collaborations

Throughout his career, Decker has collaborated with notable colleagues, including Masahiro Omori and Ronald L Moon. These collaborations have likely enriched his work and contributed to the success of his inventions.

Conclusion

David R Decker's contributions to the field of electronics through his patents reflect his innovative spirit and dedication to advancing technology. His work continues to influence the development of more efficient electronic devices.

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