The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 1979
Filed:
Jan. 06, 1977
Applicant:
Inventors:
David R Decker, Charlottesville, VA (US);
Ronald L Moon, Menlo Park, CA (US);
Assignee:
Varian Associates, Inc., Palo Alto, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 23 ; 357 16 ; 357 61 ; 357 63 ;
Abstract
An improved field-effect transistor is provided by forming the conducting channel boundary opposite the gate electrode as a heterojunction. For example a GaAs conducting channel may be bounded by an AlGaAs layer. The conduction electrons can penetrate the boundary very little and are constrained to the channel layer having good transport properties. The output conductance is reduced and the transconductance increased.