This inventor holds 5 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1992-1993.
Company Filing History:
Years Active: 1992-1993
Title: David R. Clark: Innovator in Memory Cell Technology
Introduction
David R. Clark is a notable inventor based in Garland, TX (US), recognized for his contributions to memory cell technology. He holds a total of 5 patents, showcasing his innovative approach to enhancing memory cell functionality.
Latest Patents
Among his latest patents is a method and apparatus for a filament channel pass gate ferroelectric. This invention discloses a memory cell that comprises a filament channel transistor and a ferroelectric capacitor formed on a semiconductor substrate's surface. The transistor features a substantially cylindrical channel filament, which is oriented perpendicular to the substrate surface, positioned between the surface and the capacitor. The capacitor includes a storage layer made of ferroelectric material, ensuring that the memory cell remains nonvolatile. Additionally, the storage layer may consist of a high dielectric material, allowing the memory cell to function as a dynamic random access memory cell.
Another significant patent is a method for interconnecting a filament channel transistor with a wordline. This invention provides a means for accessing a buried wordline conductor of a dynamic random access memory cell array. A selected memory cell serves as a wordline connection cell, utilizing a local oxide layer during the etching process to form wordline conductors. The oxide layer acts as a mask, creating a wordline connection body. During the formation of bitline conductors, a wordline contact may also be formed to facilitate access to the wordline conductors. This innovative approach allows for efficient access to the wordline conductors while occupying only the substrate surface area of a single memory cell.
Career Highlights
David R. Clark is currently employed at Texas Instruments Corporation, where he continues to develop cutting-edge technologies in the field of memory cells. His work has significantly impacted the efficiency and functionality of memory storage solutions.
Collaborations
Throughout his career, David has collaborated with esteemed colleagues, including James M. McDavid and Charlotte M. Tipton. These partnerships have fostered a creative environment that encourages innovation and the advancement of technology.
Conclusion
David R. Clark's contributions to memory cell technology exemplify his dedication to innovation and excellence. His patents reflect a deep understanding of the complexities involved in memory cell design and functionality. Through his work at Texas Instruments Corporation, he continues to push the boundaries of what is possible in the field of memory