David P Kopchik

Title: David P Kopchik: Innovator in Epitaxial Reactor Technology

Introduction

David P Kopchik is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of epitaxial reactor technology, particularly with his innovative designs that enhance the efficiency of wafer growth processes.

Latest Patents

David holds a patent for a "Radial epitaxial reactor for multiple wafer growth." This invention features an improved gas distribution scheme for a multi-wafer radially injected convergent horizontal epitaxial reactor. The design includes two outer distribution rings, an outer injection ring, an annular susceptor, and a central exhaust tube. The converging path of the gas stream from the outer injection ring into the central exhaust tube compensates for the depletion of reactant gases along the substrate. The injector ring is equipped with a large number of evenly spaced diffuser orifices that allow the gas to expand into the growth chamber in a laminar flow pattern. This compact design also includes the possibility of water cooling the quartz during deposition and allows for a resistive bakeout furnace, which can be used to etch and clean the reaction chamber between runs. David has 1 patent to his name.

Career Highlights

David is affiliated with the University of New Mexico, where he continues to advance his research and development in the field of epitaxial reactors. His work has been instrumental in improving the efficiency and effectiveness of wafer growth technologies.

Collaborations

David has collaborated with notable colleagues, including Eric A Armour and Shang-Zhu Sun, contributing to various projects and research initiatives within the university.

Conclusion

David P Kopchik is a distinguished inventor whose work in epitaxial reactor technology has made a significant impact on the field. His innovative designs and collaborative efforts continue to push the boundaries of what is possible in wafer growth processes.