The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 1994
Filed:
Sep. 25, 1991
Christian F Schaus, Albuquerque, NM (US);
Eric A Armour, Albuquerque, NM (US);
Kang Zheng, Albuquerque, NM (US);
Shang-Zhu Sun, Albuquerque, NM (US);
David P Kopchik, Albuquerque, NM (US);
University of New Mexico, Albuquerque, NM (US);
Abstract
An improved gas distribution scheme for a multi-wafer radially injected convergent horizontal epitaxial reactor which includes two outer distribution rings, an outer injection ring, an annular susceptor, and a central exhaust tube. The converging path of the gas stream from the outer injection ring into the central exhaust tube compensates for depletion of the reactant gases along the substrate. The injector ring has a large number of evenly spaced diffuser orifices that allow the gas to expand into the growth chamber in a laminar flow pattern. The design is compact, includes the possibility of water cooling of the quartz during deposition, and allows for a resistive bakeout furnace which can be used to etch and clean the reaction chamber between runs.