Gloucester, MA, United States of America

David Olson

This inventor holds 1 USPTO granted patent. Top assignee: Varian Semiconductor Equipment Associates, Inc.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David Olson. Retrieved from https://idiyas.com/inventor/david-olson-r81fqrzv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: The Innovative Mind of David Olson

Introduction

David Olson is a notable inventor based in Gloucester, Massachusetts. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work with ion beam systems. With one patent to his name, Olson is recognized for his expertise and commitment to advancing technology in his field.

Latest Patents

David Olson's sole patent, titled "Determining Ion Beam Parallelism Using Refraction Method," presents a groundbreaking system, method, and program product designed to assess the parallelism of an ion beam. This patent outlines an ingenious approach where the parallelism is determined by contrasting values obtained from two test positions of the ion beam. The first measurement is taken without the influence of an acceleration/deceleration electrical field, while the second is measured with its influence. By analyzing the resulting refraction of the ion beam, Olson's invention effectively magnifies any non-parallelism present, allowing for precise determination of the ion beam's alignment. Furthermore, this invention provides insights into refining ion implanter systems, showcasing its practical application in the semiconductor industry.

Career Highlights

David Olson has built a career at Varian Semiconductor Equipment Associates, Inc., where his work focuses on advancing ion implantation technologies. His background and dedication to semiconductor equipment have positioned him at the forefront of innovation within the industry. The convergence of his practical experiences and theoretical knowledge has enabled him to produce valuable inventions.

Collaborations

Throughout his career, Olson has collaborated with prominent colleagues, including Raymond Callahan and Wilhelm P Platow. These partnerships have fostered an environment of creative synergy, allowing for the exchange of ideas and the refining of technology related to ion beam applications.

Conclusion

David Olson's contributions to the field of ion beam technology exemplify the spirit of innovation. Through his unique approaches, such as the refraction method for assessing parallelism, he continues to impact the semiconductor industry significantly. Olson's journey illustrates the importance of collaboration and ingenuity in driving advancements in technology. His work not only enhances understanding but also paves the way for future developments in ion implantation and semiconductor device fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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