David M Shuttleworth is a prominent inventor based in Greensboro, NC (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to manufacturing semiconductor devices.

Latest Patents

Shuttleworth's latest patents include a method of manufacture for a semiconductor device and a silicon-on-plastic semiconductor device. The first patent discloses a method that involves providing a semiconductor stack structure with a device terminal, a buried oxide layer, and a polymeric layer that enhances thermal conductivity. The process includes removing the wafer handle to expose the semiconductor stack structure and the device terminal. The second patent describes a semiconductor device designed to eliminate nonlinearities caused by a high resistivity silicon handle interfaced with a dielectric region of a buried oxide layer. This device features a semiconductor stack structure with electrical contacts extending from its second surface, ensuring high thermal conductivity and electrical resistivity.

Career Highlights

David M Shuttleworth is currently employed at Qorvo US, Inc., where he continues to advance semiconductor technology. His work has positioned him as a key player in the industry, contributing to innovative solutions that enhance device performance.

Collaborations

Shuttleworth has collaborated with notable colleagues, including Julio C Costa and Michael J Antonell. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

David M Shuttleworth's contributions to semiconductor technology through his patents and work at Qorvo US, Inc. highlight his role as an influential inventor in the field. His innovative methods and collaborative efforts continue to shape the future of semiconductor devices.