David M Osika

Title: David M Osika: Innovator in Integrated Circuit Technology

Introduction

David M Osika is a notable inventor based in Somerville, NJ (US). He has made significant contributions to the field of integrated circuit technology, holding 2 patents that showcase his innovative approach to electrical engineering.

Latest Patents

One of his latest patents is titled "Structure and method for determining isolation of integrated circuit." This invention provides a novel means for quantitatively determining electrical isolation between active devices and passive elements in a monolithic integrated circuit. The structure and method are useful for both optimal design and manufacture of integrated circuit devices. Another significant patent is "High gain monolithic microwave integrated circuit amplifier." This device achieves linear high gain (greater than 20 dB) and high power (greater than +20 dBm) for RF power amplifiers, utilizing either fully monolithic or hybridized versions of silicon MMIC two-stage cascaded amplifiers. The device features three feedback loops in conjunction with a DC biasing network, employing resistor-capacitor feedback circuits that utilize only two capacitive elements provided as a single three-terminal element with a common lower plate.

Career Highlights

David M Osika is currently associated with SGS-Thomson Microelectronics Limited, where he continues to develop innovative solutions in integrated circuit technology. His work has significantly impacted the design and functionality of modern electronic devices.

Collaborations

He has collaborated with Ronald Patrick Green, contributing to advancements in their field through shared expertise and innovative ideas.

Conclusion

David M Osika's contributions to integrated circuit technology through his patents and work at SGS-Thomson Microelectronics Limited highlight his role as a key innovator in the industry. His inventions continue to influence the design and manufacturing processes of integrated circuits.