Sgs-thomson Microelectronics Limited

David M Osika

Ronald Patrick Green

A wafer substrate test structure and method provides a novel means for quantitatively determining electrical isolation between active devices and passive elements in a monolithic integrated circuit. The structure and method of this invention are useful for both optimal design and manufacture of integrated circuit devices.

Structure and method for determining isolation of integrated circuit

Linear high gain (greater than 20 dB) and high power (greater than +20 dbm) devices for RF power amplifiers are achieved using either fully monolithic or hybridized versions of silicon MMIC two-stage cascaded amplifiers. The device features three feedback loops in conjunction with a DC biasing network. Resistor-capacitor feedback circuits utilize only two capacitive elements which are provided as a single three-terminal element having a common lower plate.

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Somerville, NJ, United States of America

David M Osika