Burnsville, MN, United States of America

David M Elwood

This inventor holds 1 USPTO granted patent. Top assignee: Polar Semiconductor, Inc.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David M Elwood. Retrieved from https://idiyas.com/inventor/david-m-elwood

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Innovations of David M Elwood

Introduction

David M Elwood is an accomplished inventor based in Burnsville, MN (US). He has made significant contributions to the field of semiconductor technology. His innovative work focuses on improving diode structures to enhance their performance.

Latest Patents

David M Elwood holds a patent for a "Diode structure to suppress parasitic current." This invention addresses the challenges associated with current flow in diodes. The diode conducts current between an anode terminal and a cathode terminal. It includes a parasitic transistor formed between one of the terminals and the substrate. Additionally, the diode features a second transistor that competes with the parasitic transistor to direct current flow effectively.

Career Highlights

David is currently employed at Polar Semiconductor, Inc., where he continues to develop innovative solutions in semiconductor technology. His work has contributed to advancements in the efficiency and reliability of electronic components.

Collaborations

David M Elwood collaborates with Steven L Kosier, a fellow innovator in the field. Their partnership enhances the research and development efforts at Polar Semiconductor, Inc.

Conclusion

David M Elwood's contributions to diode technology exemplify the spirit of innovation in the semiconductor industry. His patent and ongoing work continue to influence advancements in electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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