Wright-Patterson AFB, OH, United States of America

David Lynes

This inventor holds 1 USPTO granted patent. Top assignee: United States of America as Represented by the Secretary of the Air Force. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David Lynes. Retrieved from https://idiyas.com/inventor/david-lynes-ble1duh5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: David Lynes and Ion-Irradiated MEMS Resonators.

Introduction

David Lynes is an inventor associated with Wright-Patterson Air Force Base in Ohio. His work includes a patent describing a method for modifying microelectromechanical systems (MEMS) resonators through ion irradiation.

Latest Patents

The available information identifies one patent associated with Lynes: “Ion Irradiation of Microelectromechanical Resonators.” The invention describes applying heavy-particle ion radiation to a fully fabricated MEMS device at a fluence of at least 1×10 cm⁻² to enhance its electromechanical coupling coefficient. The patent also describes a bandpass filter made from multiple MEMS devices produced using the method, with the devices electronically or mechanically coupled. Lynes is associated with 1 patent.

Career Highlights

Lynes’s patent work is connected to the United States Air Force, represented by the Secretary of the Air Force. The invention focuses on improving MEMS resonator performance and enabling their use in coupled-device bandpass filters.

Collaborations

Hengky Chandrahalim is identified as a coworker associated with Lynes.

Conclusion

David Lynes’s documented invention applies ion irradiation to MEMS resonators, with the aim of enhancing electromechanical coupling and supporting bandpass-filter designs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…