This inventor holds 2 USPTO granted patents. Top assignee: Micron Technology Incorporated. Active years: 2007.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2007
Title: David J. Williams: Semiconductor Inventions at Micron Technology
Introduction
David J. Williams is an inventor based in Meridian, Idaho, whose patent work concerns semiconductor-device materials and fabrication. He is associated with Micron Technology Incorporated and is credited with 2 patents.
Latest Patents
Williams’s listed patent, “Transparent Amorphous Carbon Structure in Semiconductor Devices,” describes forming a transparent amorphous carbon layer with a low absorption coefficient, allowing it to transmit visible light. The layer may serve different purposes in semiconductor devices: it can remain in the finished device structure or act as a mask during an etching step in fabrication. The supplied information lists this patent title and description twice.
Career Highlights
Williams’s patent activity reflects work on materials that can support both device structures and manufacturing processes. His association with Micron Technology connects his work to a company focused on semiconductor technologies.
Collaborations
Zhiping Yin and Weimin Li are identified as Williams’s coworkers. The information provided does not specify their roles in the listed patent.
Conclusion
David J. Williams’s listed invention explores transparent amorphous carbon as a versatile material for semiconductor devices and their fabrication.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile