This inventor holds 1 USPTO granted patent. Top assignee: Honeywell International Inc.. Active years: 2014.
Company Filing History:
Years Active: 2014
Title: David J Swanson: Innovator in Radiation-Hard Integrated Circuits
Introduction
David J Swanson is a notable inventor based in Cokato, MN (US). He has made significant contributions to the field of semiconductor technology, particularly in enhancing the radiation hardness of integrated circuits. His innovative methods have implications for various applications, especially in environments where radiation exposure is a concern.
Latest Patents
David J Swanson holds a patent for a method of fabricating total dose hard and thermal neutron hard integrated circuits. This patent describes a method that increases the radiation hardness of a semiconductor device using a modified high density plasma oxide (MHDPDX) film. The process involves using a high density plasma (HDP) to deposit the MHDPDX film, with a specific ratio of silicon source gas to oxygen source gas to ensure excess silicon content within the film. The MHDPDX film is then annealed, allowing the excess silicon to migrate and form silicon nanoclusters averaging 3-5 nm in size. The rad-hard properties of conventional BPSG films are compared with various MHDPDX films, showcasing the advancements made through his work.
Career Highlights
David J Swanson is currently employed at Honeywell International Inc., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in developing methods that enhance the performance and reliability of integrated circuits in challenging environments.
Collaborations
Throughout his career, David has collaborated with notable colleagues, including Bradley J Larsen and Michael S Liu. These collaborations have contributed to the advancement of technology in the semiconductor industry.
Conclusion
David J Swanson's contributions to the field of radiation-hard integrated circuits demonstrate his commitment to innovation and excellence. His patented methods are paving the way for advancements in semiconductor technology, ensuring greater reliability in radiation-prone environments.