The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Sep. 01, 2006
Michael S Liu, Bloomington, MN (US);
David J Swanson, Cokato, MN (US);
Bradley J Larsen, Mound, MN (US);
Michael S Liu, Bloomington, MN (US);
David J Swanson, Cokato, MN (US);
Bradley J Larsen, Mound, MN (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
A method of increasing the radiation hardness of a semiconductor device using a modified high density plasma oxide (MHDPDX) film is described. In the method a high density plasma (HDP) process is used to deposit the MHDPDX film. During the HDP process, the silicon source gas to oxygen source gas ratio is chosen so as to deposit an excess silicon content within the MHDPDX film. The MHDPDX film is then annealed to cause the excess silicon to migrate and amalgamate, creating silicon nanoclusters having an average size of about 3-5 nm. The rad-hard properties of conventional BPSG films and various MHDPDX films are then compared.