This inventor holds 2 USPTO granted patents and 8 published patent applications. Top assignee: Watkins- Johnson Company. Active years: 1976-1982.
Company Filing History:
Years Active: 1976-1982
Title: David J Bates: Innovator in Semiconductor Technology
Introduction
David J Bates is a notable inventor based in Los Altos, California. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to electronic devices. His work has had a lasting impact on the industry, particularly in the development of advanced electron beam technologies.
Latest Patents
One of Bates' latest patents is for an "Electron bombarded semiconductor device with doubly-distributed." This invention involves an electron bombarded semiconductor amplifier that features an elongated envelope with an electron gun projecting a sheet electron beam towards a distributed element semiconductor target. This design allows for the propagation of an output signal that includes either a single extended area semiconductor diode or a series of reverse-biased semiconductor diodes. The invention also incorporates a doubly-distributed deflection mechanism that synchronizes the electron beam's velocity with the target signal propagation velocity, generating an amplifier output signal.
Another significant patent by Bates is the "Rectangular beam laminar flow electron gun." This invention utilizes a narrow, elongated cathode to create a rectangular beam. It employs multiple electrodes with narrow, elongated apertures that work in conjunction with the cathode to draw and focus electrons onto a target. The design includes a parallel flow region adjacent to the cathode, followed by a divergent flow region and a convergent flow or focusing region, enhancing the efficiency of the electron gun.
Career Highlights
David J Bates is currently associated with Watkins-Johnson Company, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of electron beam devices, contributing to the company's reputation as a leader in this sector.
Collaborations
Throughout his career, Bates has collaborated with esteemed colleagues such as Aris Silzars and Lester A Roberts. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.
Conclusion
David J Bates is a prominent figure in the realm of semiconductor innovation. His patents reflect a deep understanding of electron beam technology and its applications. His contributions continue to influence the industry, solidifying his legacy as an inventor dedicated to advancing electronic devices.