Watkins- Johnson Company

David J Bates

Aris Silzars

Lester A Roberts

Carroll B Norris, Jr

An electron bombarded semiconductor amplifier including an elongated envelope having an electron gun projecting a sheet electron beam towards a distributed element semiconductor target which propagates an output signal including a single extended area semiconductor diode or a plurality of series-connected semiconductor diodes which are reverse biased and a doubly-distributed deflection means adapted to receive an input signal and cooperate with said sheet electron beam to deflect the beam in accordance with an input signal in synchronism with electron beam velocity and target signal propagation velocity to strike the target and generate an amplifier output signal.

Electron bombarded semiconductor device with doubly-distributed

A laminar flow electron gun employing a narrow, elongated cathode for forming a rectangular beam and a plurality of electrodes having narrow, elongated apertures cooperating with said cathode to draw electrons from said cathode and operate on the electrons to focus the rectangular beam onto a target by providing a parallel flow region adjacent said cathode, followed by a divergent flow region, in turn, followed by a convergent flow or focusing region.

Growing community of inventors

Los Altos, CA, United States of America

David J Bates