David I Golland

Title: The Innovative Contributions of David I Golland

Introduction

David I Golland is a notable inventor based in Chesterfield, MO (US), recognized for his significant contributions to the field of semiconductor technology. With a total of three patents to his name, Golland has developed innovative processes that enhance the manufacturing of bonded BESOI wafers. His work has implications for the efficiency and effectiveness of semiconductor devices.

Latest Patents

Golland's latest patents include a process for edge stripping bonded BESOI wafers. This process involves stripping the outer edge of a bonded BESOI wafer, which consists of a handle wafer, an oxide layer, a device layer, and a p.sup.+ etch-stop layer. The method includes masking the exposed face of the p.sup.+ etch-stop layer and abrading the periphery of the BESOI wafer to remove edge margins of both the p.sup.+ etch-stop layer and the device layer. This innovative approach is crucial for improving the quality and performance of semiconductor devices.

Career Highlights

Throughout his career, David I Golland has worked with prominent companies in the semiconductor industry, including Si Bond LLC and MEMC Electronic Materials, Inc. His experience in these organizations has allowed him to refine his skills and contribute to advancements in wafer technology.

Collaborations

Golland has collaborated with notable professionals in his field, including Robert A. Craven and Ronald D. Bartram. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in semiconductor manufacturing.

Conclusion

David I Golland's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative processes for bonded BESOI wafers continue to impact the industry positively.