Company Filing History:
Years Active: 1995-1999
Title: The Innovative Contributions of David G. Hawron
Introduction
David G. Hawron is a notable inventor based in Clifton Park, NY (US). He has made significant contributions to the field of chemical processes, particularly in the preparation of bis(ether anhydrides). With a total of 5 patents to his name, his work has advanced the efficiency of chemical manufacturing.
Latest Patents
Hawron's latest patents focus on a novel process for preparing bis(ether anhydrides) using alkylamine-derived compounds. This innovative process employs alkylamines with low melting temperatures, which allows for unique intermediate steps in the preparation of bis(ether anhydrides). The alkylamines utilized contain alkyl groups with at least three carbon atoms and boiling temperatures ranging from 48 to 250 degrees Celsius at atmospheric pressure. By using these amines, liquid alkylamines can now be incorporated into the imidization process step. The N-alkyl nitrophthalimides produced from the recovered imidization product can be purified through liquid/liquid extraction or vacuum distillation. This advancement enables displacement reactions to be conducted at a higher solids level, achieving greater efficiency than conventional methods.
Career Highlights
David G. Hawron is currently employed at General Electric Company, where he continues to innovate and contribute to the field of chemical engineering. His work has not only enhanced the processes within his company but has also had a broader impact on the industry.
Collaborations
Hawron has collaborated with several talented individuals, including Brent A. Dellacoletta and Roy Ray Odle. These partnerships have fostered a creative environment that encourages the development of groundbreaking ideas and solutions.
Conclusion
David G. Hawron's contributions to the field of chemical processes exemplify the spirit of innovation. His patents and collaborative efforts continue to push the boundaries of what is possible in chemical manufacturing.
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