Turnhout, Belgium

David Deckers

This inventor holds 2 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignee: Asml Netherlands B.v.. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David Deckers. Retrieved from https://idiyas.com/inventor/david-deckers-qy8l6krn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0


Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Unveiling the Innovator: David Deckers

Introduction: David Deckers is a brilliant inventor residing in Turnhout, BE, whose inventive spirit has led to groundbreaking advancements in industrial processes. With a notable patent under his belt, he has made significant contributions to the field of lithographic processes.

Latest Patents: David Deckers holds a single patent for "Methods and apparatus for obtaining diagnostic information relating to an industrial process." This patent revolutionizes the lithographic process by utilizing alignment data to extract diagnostic information crucial for enhancing the performance of industrial processes.

Career Highlights: David Deckers is a valuable asset at ASML Netherlands B.V., where his expertise has propelled the company to new heights in technological innovation. His dedication to improving industrial processes showcases his unwavering commitment to excellence in his field.

Collaborations: Alongside esteemed coworkers Alexander Ypma and Jasper Menger, David Deckers has fostered a collaborative environment where cutting-edge ideas flourish. Together, they have formed a dynamic team that pushes the boundaries of innovation in the industrial sector.

Conclusion: In conclusion, David Deckers stands as a beacon of innovation in the realm of industrial processes. His inventive prowess and dedication to excellence continue to shape the future of technology, setting a standard for aspiring inventors to follow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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