Vancouver, WA, United States of America

David A Beauchaine

This inventor holds 1 USPTO granted patent. Top assignee: Seh America, Inc.. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David A Beauchaine. Retrieved from https://idiyas.com/inventor/david-a-beauchaine

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Biography of David A Beauchaine

Introduction

David A Beauchaine is an accomplished inventor based in Vancouver, WA (US). He is known for his significant contributions to the field of semiconductor manufacturing.

Latest Patents

David holds a patent for "Double side polished wafers having external gettering sites, and method of producing same." This innovative process involves creating a double side polished wafer that incorporates oxygen-induced stacking faults to provide extrinsic gettering on the back surface of the wafer. The method includes polishing the back surface, depositing a thin polysilicon film, and subjecting the wafer to a thermal oxidation step, which ultimately enhances its performance.

Career Highlights

David is currently employed at Seh America, Inc., where he continues to advance his work in semiconductor technology. His expertise in wafer manufacturing has made a notable impact in the industry.

Collaborations

Throughout his career, David has collaborated with esteemed colleagues such as Timothy L Brown and Sergei V Koveshnikov. These partnerships have fostered innovation and development in their respective fields.

Conclusion

David A Beauchaine's contributions to semiconductor manufacturing through his patented processes exemplify his dedication to innovation. His work continues to influence the industry and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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