South Wales, United Kingdom

Dave Kent

This inventor holds 1 USPTO granted patent. Top assignee: International Rectifier Corporation. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dave Kent. Retrieved from https://idiyas.com/inventor/dave-kent-b4t43pqh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2008

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Dave Kent

Introduction

Dave Kent is a notable inventor based in South Wales, GB. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of power semiconductor devices.

Latest Patents

One of Dave Kent's key inventions is a patent for a trench power MOSFET with reduced gate resistance. This patent describes a method for manufacturing a trench type power semiconductor device. The process includes steps for forming proud gate electrodes, which serve to decrease the resistivity of the device. This innovation is crucial for improving the efficiency of power electronics.

Career Highlights

Dave Kent is currently employed at International Rectifier Corporation, a leading company in the semiconductor industry. His role involves research and development, where he applies his expertise to create advanced semiconductor solutions. With 1 patent to his name, he has established himself as a valuable contributor to the field.

Collaborations

Throughout his career, Dave has collaborated with talented individuals such as Jianjun Cao and Paul Harvey. These partnerships have fostered innovation and have led to the development of cutting-edge technologies in the semiconductor sector.

Conclusion

In summary, Dave Kent is an accomplished inventor whose work in semiconductor technology has made a significant impact. His innovative patent for a trench power MOSFET demonstrates his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…