The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Nov. 04, 2004
Applicants:
Jianjun Cao, Torrance, CA (US);
Paul Harvey, Chepstow, GB;
Dave Kent, South Wales, GB;
Robert Montgomery, South Glamorgan, GB;
Hugo Burke, Wales, GB;
Kyle Spring, Temecula, CA (US);
Inventors:
Jianjun Cao, Torrance, CA (US);
Paul Harvey, Chepstow, GB;
Dave Kent, South Wales, GB;
Robert Montgomery, South Glamorgan, GB;
Hugo Burke, Wales, GB;
Kyle Spring, Temecula, CA (US);
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a trench type power semiconductor device which includes process steps for forming proud gate electrodes in order to decrease the resistivity thereof.