This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2001.
Company Filing History:
1 out of 834,307 Years Active: 2001
Title: Innovations of Dave Dobuzinsky
Introduction
Dave Dobuzinsky is an accomplished inventor based in Hopewell Junction, NY (US). He has made significant contributions to the field of integrated circuit technology. His innovative approach has led to the development of a unique method for forming wires on an integrated circuit chip.
Latest Patents
Dave holds a patent for a method of forming conductive lines in an integrated circuit chip. This damascene method involves etching trenches using a plasma formed by capacitively coupling a gas mixture at power levels ranging from 500 to 3000 watts under a pressure of 50-400 mTorr. The gas mixture consists of 2-30 sccm of C, F, 20-80 sccm of CO, 2-30 sccm of O, and 50-400 sccm of Ar. The gas flow can be adjusted to achieve optimal levels, ensuring a high degree of uniformity. Wafers that do not meet the selected uniformity can be reworked. The damascene wiring layer formed in the trenches exhibits a high degree of sheet resistance uniformity and improved line-to-line shorts yield. He has 1 patent to his name.
Career Highlights
Throughout his career, Dave has demonstrated a commitment to advancing technology in the semiconductor industry. His innovative methods have contributed to the efficiency and reliability of integrated circuits. His work has been recognized for its impact on the field.
Collaborations
Dave has collaborated with notable professionals in his field, including Viraj Yashawant Sardesai and Lawrence Alfred Clevenger. These collaborations have further enhanced his contributions to technology and innovation.
Conclusion
Dave Dobuzinsky's innovative methods in integrated circuit technology showcase his expertise and dedication to advancing the field. His patent reflects a significant achievement that contributes to the efficiency of semiconductor manufacturing.