Daryl L Habersetzer

This inventor holds 40 USPTO granted patents, primarily in Semiconductor Testing. Top assignee: Micron Technology Incorporated. Active years: 1997-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daryl L Habersetzer. Retrieved from https://idiyas.com/inventor/daryl-l-habersetzer

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40

% Patents Active = 82.5

Average Co-Inventor Count = 4.9

ph-index = 10

Forward Citations = 303(Granted Patents)

Company Filing History:

40 out of 39,253

Micron Technology Incorporated

patents

Years Active: 1997-2005

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Areas of Expertise:

Antifuse Programming

Semiconductor Device

Voltage Regulation

Memory Circuit

Defect Compensation

Integrated Circuit

Testing Method

Memory Cell

Self-Refresh

Capacitor Testing

Margin-Range Apparatus

Leakage Detection

40 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6903991 - Circuit for programming antifuse bits (2005-06-07),

2. 6882587 - Method of preparing to test a capacitor (2005-04-19),

3. 6834022 - Partial array self-refresh (2004-12-21),

4. 6826071 - Circuit for programming antifuse bits (2004-11-30),

5. 6778452 - Circuit and method for voltage regulation in a semiconductor device (2004-08-17),

6. 6661693 - Circuit for programming antifuse bits (2003-12-09),

7. 6650587 - Partial array self-refresh (2003-11-18),

8. 6646459 - Method for disabling and re-enabling access to IC test functions (2003-11-11),

9. 6600687 - Method of compensating for a defect within a semiconductor device (2003-07-29),

10. 6590407 - Apparatus for disabling and re-enabling access to IC test functions (2003-07-08),

11. 6570400 - Method for disabling and re-enabling access to IC test functions (2003-05-27),

12. 6469944 - Method of compensating for a defect within a semiconductor device (2002-10-22),

13. 6452846 - Driver circuit for a voltage-pulling device (2002-09-17),

14. 6445629 - Method of stressing a memory device (2002-09-03),

15. 6445605 - Circuit for programming antifuse bits (2002-09-03),

Title: Innovations of Daryl L Habersetzer in Circuit Technology

Introduction: Daryl L Habersetzer, based in Boise, ID, has made significant contributions to the field of electronics through his impressive portfolio of 40 patents. His work primarily focuses on enhancing circuitry, particularly in memory arrays, emphasizing efficiency and speed.

Latest Patents: Among his notable patents, one stands out: the "Circuit for programming antifuse bits." This innovative circuitry allows for the simultaneous programming of all antifuse elements in a bank, drastically improving the speed of the programming process. Additionally, a feedback circuit is integrated with each antifuse element to halt the current flow once it is programmed. This invention showcases his ability to enhance circuit functionality.

Another of his recent patents is the "Method of preparing to test a capacitor." This invention involves a circuit designed to modify the drive applied to an access transistor, which regulates communication within a memory array. By altering this drive, the invention aids in assessing the sense amplifier's performance and detecting defects within the memory array by manipulating communication rates.

Career Highlights: Throughout his career at Micron Technology Incorporated, Daryl has continually driven advancements in memory technology, solidifying his reputation as a leading innovator within the electronics sector. His expertise and dedication to improving circuitry have been vital to his company's success.

Collaborations: Daryl has collaborated with notable colleagues such as James E Miller, Jr and Manny K Ma. These partnerships have allowed for the exchange of ideas and further innovation within their projects, contributing to the overall growth and development of technology at Micron Technology Incorporated.

Conclusion: Daryl L Habersetzer's contributions to circuit technology through his numerous patents reflect his dedication and ingenuity in the field of electronics. His work continues to influence advancements in memory technology, demonstrating the vital role of innovative thinkers in pushing the boundaries of engineering and technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]