Folsom, CA, United States of America

Darshak A Udeshi


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2009-2010

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Darshak A Udeshi

Introduction

Darshak A Udeshi is a notable inventor based in Folsom, California. He has made significant contributions to the field of data storage and processing, holding two patents that showcase his innovative spirit and technical expertise. Udeshi's work primarily focuses on enhancing the efficiency and functionality of multi-level flash memory devices.

Latest Patents

Udeshi's latest patents include a "Data storage and processing algorithm for placement of multi-level flash cell (MLC)". This wireless device features a memory engine that executes a voting algorithm to average memory cell data sensing results over time, thereby optimizing charge placement in the memory cell. Another significant patent is "Program-verify sensing for a multi-level cell (MLC) flash memory device". This invention involves generating a tracking signal during a program verify sensing operation to match a sense amplifier signal, ensuring accurate data processing.

Career Highlights

Darshak A Udeshi is currently employed at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing and data processing technologies. His role at Intel allows him to work on cutting-edge projects that push the boundaries of memory technology.

Collaborations

Udeshi collaborates with talented professionals in his field, including Rezaul Haque and Karthi Ramamurthi. These collaborations foster an environment of innovation and creativity, contributing to the development of groundbreaking technologies.

Conclusion

Darshak A Udeshi's contributions to the field of data storage and processing are noteworthy. His patents reflect a commitment to innovation and excellence in technology. Udeshi's work continues to influence the industry, paving the way for future advancements in memory devices.

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