Meridian, ID, United States of America

Darren V Young


Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Orem, UT (US) (2014)
  • Meridian, ID (US) (2010 - 2016)

Company Filing History:


Years Active: 2010-2016

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4 patents (USPTO):Explore Patents

Title: The Innovations of Darren V Young

Introduction

Darren V Young is a notable inventor based in Meridian, ID (US), recognized for his contributions to semiconductor technology. With a total of four patents to his name, he has made significant advancements in the field of recessed access devices and gate electrodes.

Latest Patents

His latest patents include innovations in recessed access transistor devices used with semiconductor devices. One of his patents focuses on gate electrodes that incorporate materials with multiple work functions, which are electrically isolated from each other and supplied with two or more voltage supplies. Additionally, these materials can create a diode junction within the gate electrode. Another patent addresses recessed memory cell access devices and gate electrodes, showcasing similar technological advancements.

Career Highlights

Darren is currently employed at Micron Technology Incorporated, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing more efficient and effective access devices that enhance the performance of semiconductor applications.

Collaborations

Darren has collaborated with talented individuals such as Jasper S Gibbons and Kunal R Parekh, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

Darren V Young's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in the industry, making him a key figure in the realm of innovations.

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