Darrell D Watkins, Jr

Title: Darrell D Watkins, Jr: Innovator in Silicon Wafer Technology

Introduction

Darrell D Watkins, Jr. is a notable inventor based in Maryland Heights, MO (US). He has made significant contributions to the field of semiconductor technology, particularly in the preparation of silicon wafers.

Latest Patents

Watkins holds 1 patent for a method titled "Method for the preparation of an epitaxial silicon wafer with intrinsic gettering." This invention focuses on a novel process for creating a silicon wafer with an epitaxial layer. The method involves depositing an epitaxial layer onto a silicon wafer surface, followed by heating the wafer to a temperature of at least about 1175°C. The heat treatment can occur during or after the deposition process. After heating, the wafer is cooled at a rate of at least about 10°C/sec while maintaining a temperature above 1000°C and ensuring that the wafer is not in contact with a susceptor. This innovative process is conducted within the same reactor chamber, enhancing efficiency and effectiveness.

Career Highlights

Watkins is associated with Memc Electronic Materials, Inc., where he applies his expertise in semiconductor manufacturing. His work has contributed to advancements in the production of high-quality silicon wafers, which are essential for various electronic applications.

Collaborations

One of his notable collaborators is Charles Chiun-Chieh Yang, with whom he has worked on various projects related to silicon wafer technology.

Conclusion

Darrell D Watkins, Jr. stands out as an inventor whose work in silicon wafer technology has the potential to impact the semiconductor industry significantly. His innovative methods and dedication to research continue to pave the way for advancements in this critical field.