The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Mar. 19, 2003
Charles Chiun-Chieh Yang, Gilbert, AZ (US);
Darrell D. Watkins, Jr., Maryland Heights, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is also heated to a temperature of at least about 1175° C. This heat treatment begins either during or after the epitaxial deposition. Following the heat treatment, the heated wafer is cooled for a period of time at a rate of at least about 10° C./sec while (a) the temperature of the wafer is greater than about 1000° C., and (b) the wafer is not in contact with a susceptor. In this process, the epitaxial deposition, heating, and cooling are conducted in the same reactor chamber.