Santa Cruz, CA, United States of America

Darrell D Rinerson

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Advanced Micro Devices Corporation. Active years: 1986-1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Darrell D Rinerson. Retrieved from https://idiyas.com/inventor/darrell-d-rinerson-lr2bl9wj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1986-1987

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2 patents (USPTO):Explore Patents

Title: The Innovations of Darrell D. Rinerson

Introduction

Darrell D. Rinerson is a notable inventor based in Santa Cruz, California. He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative spirit and technical expertise. His work primarily focuses on nonvolatile memory solutions that enhance data storage capabilities.

Latest Patents

Rinerson's latest patents include the E² PROM memory cell and a nonvolatile dynamic RAM circuit. The E² PROM memory cell is a five-volt only design that incorporates metal bit read and bit ground column lines, along with polysilicon word select and program row lines. This innovative cell features an interconnected word select and stacked gate transistor that serially connects the bit read and bit ground lines. Additionally, it includes a tunneling structure located below the program row line, which is essential for charging or uncharging a floating polysilicon gate in the stacked gate transistor. Notably, the bit ground line is disconnected from ground during these operations, enhancing its functionality.

The nonvolatile dynamic RAM circuit is another groundbreaking invention by Rinerson. This circuit operates in both dynamic RAM mode and a second, nonvolatile mode. It features a memory cell with a transfer transistor that couples a storage capacitor with a floating gate to a bit line. This design allows the memory cell to hold information through charge storage in both the storage capacitor and the floating gate. The nonvolatile dynamic RAM comprises multiple memory cells connected to a bit line, which is linked to a sense amplifier for determining the presence or absence of storage charges in both modes.

Career Highlights

Darrell D. Rinerson is currently employed at Advanced Micro Devices Corporation, where he continues to push the boundaries of memory technology. His work has significantly impacted the industry, particularly in the development of nonvolatile memory solutions.

Collaborations

Rinerson collaborates with talented individuals in his field, including his coworker Patrick T. Chuang. Their combined expertise contributes to the advancement of innovative technologies at Advanced Micro Devices Corporation.

Conclusion

Darrell D. Rinerson's contributions to memory technology through his patents and work at Advanced Micro Devices Corporation highlight his role as a leading inventor in the field. His innovative designs continue to shape the future of data storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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