Advanced Micro Devices Corporation

Darrell D Rinerson

Patrick T Chuang

A five volt only E.sup.2 PROM cell including metal bit read and bit ground column lines and polysilicon word select and program row lines. An interconnected word select and stacked gate transistor serially connect the bit read and bit ground lines. The cell also includes a tunneling structure, disposed below the program row line, for charging or uncharging a floating polysilicon gate in the stacked gate transistor. The bit ground line is disconnected from ground during the charging and uncharging operations.

E.sup.2 prom memory cell

A nonvolatile dynamic RAM capable of operating in a dynamic RAM mode and a second, nonvolatile mode, is disclosed. The nonvolatile dynamic RAM has a memory cell having a transfer transistor for coupling a storage capacitor having a floating gate to a bit line. The memory cell holds information by the storage of charge in the storage capacitor and also holds information by the storage of charge in the floating gate. This data can be stored and retrieved in a volatile mode and in a nonvolatile mode. The nonvolatile dynamic RAM has a plurality of these memory cells connected to a bit line which, in turn, is connected to a sense amplifier for determining the presence or absence of storage charges in the storage capacitor of a selected memory cell in the first mode, and for determining the presence or absence of storage charges in the floating gate of the selected memory cell in the second mode.

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Santa Cruz, CA, United States of America

Darrell D Rinerson