Company Filing History:
Years Active: 2016
Title: The Innovations of Dao-Hong Yang
Introduction
Dao-Hong Yang is a notable inventor based in Xihu, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the efficiency and functionality of Metal-Oxide-Semiconductor (MOS) devices.
Latest Patents
Dao-Hong Yang holds a patent for a "Self-aligned implantation process for forming junction isolation regions." This innovative device includes a semiconductor substrate, a well region within the substrate, and a MOS device. The MOS device features a gate dielectric that overlaps the well region, a gate electrode positioned above the gate dielectric, and a source/drain region within the well region. Notably, the source/drain region and the well region possess opposite conductivity types. An edge of the first source drain region, which faces away from the gate electrode, is in contact with the well region to create a junction isolation. This patent showcases his expertise in semiconductor design and fabrication.
Career Highlights
Dao-Hong Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His role involves working on advanced technologies that drive innovation in semiconductor manufacturing.
Collaborations
Dao-Hong has collaborated with esteemed colleagues, including Chien-Hsien Tseng and Shou-Gwo Wuu. Their combined efforts contribute to the advancement of semiconductor technologies and innovations.
Conclusion
Dao-Hong Yang's contributions to the field of semiconductor technology are noteworthy. His patent and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as an influential inventor in the industry.