Daniil M Lukin

Title: Daniil M Lukin: Innovator in Silicon Carbide Technology

Introduction

Daniil M Lukin is a prominent inventor based in East Setauket, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of silicon carbide materials. His innovative work has led to the development of a unique patent that enhances the performance and application of silicon carbide.

Latest Patents

Daniil M Lukin holds a patent for "Silicon-carbide-on-insulator via photoelectrochemical etching." This patent describes a method for providing silicon carbide on an insulator by bonding bulk silicon carbide to a substrate using an oxide-oxide fusion bond. The process includes thinning the bulk silicon carbide as necessary and employing a doping-selective etch to improve the thickness uniformity of the silicon carbide layer(s). This innovation is crucial for advancing the efficiency and reliability of semiconductor devices.

Career Highlights

Daniil M Lukin is affiliated with Leland Stanford Junior University, where he continues to engage in cutting-edge research and development. His work at the university allows him to collaborate with other leading experts in the field, further enhancing his contributions to semiconductor technology.

Collaborations

Daniil has worked alongside notable colleagues such as Jelena Vuckovic and Geun Ho Ahn. Their collaborative efforts have fostered an environment of innovation and discovery, pushing the boundaries of what is possible in silicon carbide applications.

Conclusion

Daniil M Lukin is a key figure in the advancement of silicon carbide technology, with a patent that showcases his innovative approach to semiconductor materials. His work at Leland Stanford Junior University and collaborations with esteemed colleagues highlight his commitment to pushing the frontiers of technology.