The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Sep. 03, 2021
Applicant:
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Inventors:
Daniil M. Lukin, East Setauket, NY (US);
Jelena Vuckovic, Palo Alto, CA (US);
Assignee:
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02167 (2013.01); H01L 21/02172 (2013.01); H01L 21/3212 (2013.01);
Abstract
Silicon carbide on insulator is provided by bonding bulk silicon carbide to a substrate with an oxide-oxide fusion bond, followed by thinning the bulk silicon carbide as needed. A doping-selective etch for silicon carbide is used to improve thickness uniformity of the silicon carbide layer(s).