Hsin-Chu, Taiwan

Daniel Yang


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 67(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: The Innovations of Daniel Yang

Introduction

Daniel Yang is an accomplished inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of integrated circuit technology. His innovative work has led to the development of a unique patent that enhances the performance and efficiency of electronic devices.

Latest Patents

Daniel Yang holds a patent for a "Back end integrated WLCSP structure without aluminum pads." This integrated circuit structure includes a passivation layer, a via opening in the passivation layer, and a copper-containing via in the via opening. Additionally, it features a polymer layer over the passivation layer, which comprises an aperture that exposes the copper-containing via. The design also incorporates a post-passivation interconnect (PPI) line that contacts the copper-via opening and an under-bump metallurgy (UBM) that is electrically connected to the PPI line. This innovative structure is aimed at improving the reliability and performance of semiconductor devices.

Career Highlights

Daniel Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to collaborate with some of the brightest minds in the field.

Collaborations

Some of his notable coworkers include Hsiu-Mei Yu and Tjandra Winata Karta. Their collective expertise contributes to the advancement of technology within the company.

Conclusion

Daniel Yang's contributions to the field of integrated circuits exemplify the spirit of innovation. His patent reflects a commitment to enhancing electronic device performance. His work continues to influence the semiconductor industry positively.

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