This inventor holds 1 USPTO granted patent. Top assignee: Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 1977.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1977
Title: Daniel Thoulouze and Low-Temperature Measurement Technology.
Introduction
Daniel Thoulouze is an inventor associated with Échirolles, France, and the Commissariat à l’énergie atomique et aux énergies alternatives (CEA). His recorded patent concerns a detector designed for thermometric measurements at temperatures below 1 K.
Latest Patents
Thoulouze is credited with 1 patent: “Measuring Detector and a Method of Fabrication of Said Detector.” The invention uses the electrical resistance of a defined volume of doped semiconductor as its measuring element. A carefully controlled, ion-implanted surface region and two electrical contacts form the sensing structure, while a thermally conductive metallic coating on the opposite face helps maintain good thermal contact. The detector is primarily intended for measurements at very low temperatures.
Career Highlights
The patent reflects work on semiconductor-based sensing and fabrication methods for specialized cryogenic measurements. Thoulouze’s recorded association with CEA connects his invention to research in advanced measurement technology.
Collaborations
The supplied information names Louise Peccoud, née Toupillier, and Jean Bernard as coworkers. It does not specify their roles in the patent or the extent of their collaboration with Thoulouze.
Conclusion
Daniel Thoulouze’s recorded patent presents a semiconductor resistance detector designed for thermometry below 1 K, highlighting a focused contribution to low-temperature measurement technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile