Munich, Germany

Daniel Schleißer

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel Schleißer. Retrieved from https://idiyas.com/inventor/daniel-schleißer-ig3cxy9n

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Daniel Schleißer: Semiconductor Module Innovation

Introduction

Daniel Schleißer is an inventor associated with Munich, Germany, and Infineon Technologies AG. His patent work includes a semiconductor module design and a method for fabricating it.

Latest Patents

Schleißer is named on 1 patent: “Semiconductor Module and Method for Fabricating a Semiconductor Module.” The invention describes a printed circuit board with power semiconductor packages mounted and electrically connected on one side. The packages are arranged so their opposite sides can be coupled to a heatsink. A bus bar is also electrically connected to the board and carries supply current, ground current, or both for at least some of the packages. The design brings together electrical connections and heat-management provisions in a semiconductor module.

Career Highlights

Schleißer’s listed patent reflects work in semiconductor packaging and module fabrication, areas relevant to power electronics. He is associated with Infineon Technologies AG, a company active in semiconductor technology.

Collaborations

Ramdas Rangnath Ugale is identified as Schleißer’s coworker. The available information does not specify whether Ugale collaborated with him on this patent.

Conclusion

Daniel Schleißer’s patent describes a semiconductor module that integrates power packages, a current-carrying bus bar, and provisions for heatsink coupling, highlighting his contribution to semiconductor design.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…