Company Filing History:
Years Active: 2002
Title: The Innovations of Daniel Lee-Wei Yen
Introduction
Daniel Lee-Wei Yen is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He has made significant strides in the field of CMOS device fabrication, showcasing his expertise through innovative patent applications.
Latest Patents
One of Daniel's key patents is titled "Method of fabricating CMOS device with dual gate electrode." This patent describes a method for creating a dual gate electrode CMOS device that utilizes both an N+ poly gate for the nMOSFET and a metal gate for the pMOSFET. The design includes a highly conductive metal cap for the N+ nMOSFET poly gate, which serves to reduce gate resistance. Additionally, a sacrificial cap is employed for the N+ poly gate to eliminate the need for a mask level in the dual gate electrode process. This innovation has the potential to enhance the performance and efficiency of CMOS devices.
Career Highlights
Daniel is currently employed at Chartered Semiconductor Manufacturing Ltd, a prominent corporation in the semiconductor industry. His work at this company has allowed him to apply his innovative ideas and contribute to advancements in semiconductor technology.
Collaborations
Throughout his career, Daniel has collaborated with esteemed colleagues such as Chew-Hoe Ang and Eng-Hua Lim. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and the development of cutting-edge technologies.
Conclusion
Daniel Lee-Wei Yen's contributions to the field of semiconductor technology, particularly through his innovative patent on CMOS device fabrication, highlight his role as a significant inventor in the industry. His work continues to influence advancements in technology and showcases the importance of innovation in the semiconductor sector.