Dresden, Germany

Daniel Kai Simon

USPTO Granted Patents = 3 

Average Co-Inventor Count = 3.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020-2025

where 'Filed Patents' based on already Granted Patents

3 patents (USPTO):

Title: Innovator Daniel Kai Simon: Pioneering Semiconductor Layer Formation in Dresden

Introduction

Daniel Kai Simon, an accomplished inventor based in Dresden, Germany, has made significant contributions to the field of semiconductor technology. With a total of three patents to his name, Simon's innovations focus on methods of forming and depositing semiconductor layers, which are critical for advanced electronics.

Latest Patents

Simon’s latest patents demonstrate his expertise in semiconductor layer formation. One of his patents, titled "Apparatus and method of forming a semiconductor layer," outlines a method involving the introduction of a source gas containing a precursor material and a carrier gas into a reactor. The process includes controlling the gas flow through a primary flow controller in response to the concentration changes of the precursor material. An auxiliary gas is also introduced, and its flow is regulated to maintain a constant total gas flow in the reactor despite changes in the source gas flow.

Another noteworthy patent is "Apparatus and method of depositing a layer at atmospheric pressure." This patent describes a method of layer deposition where a physical property related to air pressure in the reactor chamber is measured. A main gas mixture is introduced at atmospheric pressure, with the source gas comprising a precursor material and carrier gas. The flow of at least one gas in the mixture is controlled based on air pressure changes within the reactor chamber.

Career Highlights

Simon has garnered valuable experience throughout his career by working with leading companies in the semiconductor industry. He has made impactful contributions at Infineon Technologies AG and Infineon Technologies Dresden GmbH & Co. KG, where he honed his skills in semiconductor processing and layer deposition.

Collaborations

Throughout his professional journey, Simon has collaborated with esteemed colleagues in the field, including Olaf Fiedler and Katarzyna Kowalik-Seidl. These partnerships highlight the collaborative nature of semiconductor research and the continual pursuit of innovation.

Conclusion

Daniel Kai Simon's work in developing advanced methods for semiconductor layer formation has positioned him as an influential figure in the field. With his inventive spirit and significant contributions to the industry, Simon continues to drive forward the boundaries of semiconductor technology, paving the way for future advancements in electronics.

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