The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Oct. 25, 2021
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Olaf Fiedler, Dresden, DE;
Daniel Kai Simon, Dresden, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/448 (2006.01); C23C 16/52 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); C23C 16/24 (2013.01); C23C 16/4481 (2013.01); C23C 16/52 (2013.01); H01L 21/0262 (2013.01); H01L 21/68714 (2013.01);
Abstract
A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.