The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Nov. 14, 2018
Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;
Katarzyna Kowalik-Seidl, Unterhaching, DE;
Ayad Abdul-Hak, Dresden, DE;
Olaf Fiedler, Dresden, DE;
Richard Hensch, Dresden, DE;
Markus Schmitt, Neubiberg, DE;
Daniel Kai Simon, Dresden, DE;
Infineon Technologies Dresden GmbH & Co. KG, Dresden, DE;
Abstract
A semiconductor device include a semiconductor body with a drain region of a first conductivity type, a drift region of the first conductivity type and having a doping concentration lower than a doping concentration of the drain region, a buffer region of the first conductivity type arranged between the drift region and the drain region, a source region of the first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region and forming a first pn-junction with the source region and a second pn-junction with the drift region, and a charge compensation region of the second conductivity type extending from the body region towards the buffer region. A source metallization is in ohmic contact with the source region. A drain metallization is ohmic contact with the drain region.