Daniel K Berkoh

Title: The Innovative Contributions of Daniel K Berkoh

Introduction

Daniel K Berkoh is a notable inventor based in Woodland Hills, CA (US). He has made significant contributions to the field of plasma etching technology. With a total of 2 patents to his name, Berkoh's work has advanced the capabilities of plasma etchers in various applications.

Latest Patents

Berkoh's latest patents include "Apparatus and methods for shielding a plasma etcher electrode" and "Apparatus and methods for electrical measurements in a plasma etcher." The first patent discloses a method of etching a plurality of features on a wafer, which involves positioning the wafer on a feature plate within a chamber of a plasma etcher. This method includes generating plasma ions using a radio frequency power source and directing those ions toward the wafer while providing an electrode shield around the cathode to protect it from ions. The second patent describes an apparatus for etching features on a wafer, which comprises a chamber, a feature plate, and a gas channel for plasma source gas. This apparatus also includes a radio frequency power source and a clamp designed to measure the DC bias of the feature plate.

Career Highlights

Berkoh is currently employed at Skyworks Solutions, Inc., where he continues to innovate in the field of plasma etching. His work has been instrumental in enhancing the efficiency and effectiveness of plasma etching processes.

Collaborations

Throughout his career, Berkoh has collaborated with talented individuals such as Dean G Scott and Elena Becerra Woodard. These collaborations have contributed to the development of advanced technologies in the field.

Conclusion

Daniel K Berkoh's contributions to plasma etching technology through his patents and work at Skyworks Solutions, Inc. highlight his role as an influential inventor in the industry. His innovative methods and apparatuses continue to shape the future of plasma etching applications.