Daniel Huang

Title: The Innovations of Daniel Huang

Introduction

Daniel Huang is a notable inventor based in Chu-Pei, Taiwan. He has made significant contributions to the field of nonvolatile memory technology. His innovative approach has led to the development of a unique memory structure that enhances data storage capabilities.

Latest Patents

Daniel Huang holds a patent for a nonvolatile flash memory and method of operating the same. This invention proposes a nonvolatile memory with single-gate memory cells. The structure includes a transistor and a capacitor embedded in a semiconductor substrate. The transistor features a first conducting gate stacked on a dielectric, with doped regions acting as the source and drain. The capacitor consists of a doped region, a dielectric, and a second conducting gate. The conducting gates of both the capacitor and the transistor are electrically connected, forming a single floating gate of the memory cell. Additionally, the invention includes methods for back-bias programming, writing, erasing, and reading operations for the single-gate memory cells.

Career Highlights

Daniel Huang is currently employed at Yield Microelectronics Corporation, where he continues to advance his research in memory technologies. His work has been instrumental in developing efficient memory solutions that cater to modern computing needs.

Collaborations

Daniel has collaborated with several talented individuals in his field, including Lee M Wang and Hsin Chang Lin. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Daniel Huang's innovative contributions to nonvolatile memory technology exemplify the impact of dedicated inventors in the tech industry. His patent and ongoing work at Yield Microelectronics Corporation highlight the importance of innovation in enhancing data storage solutions.